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TB0640L - TB3500L
Maximum Ratings @T A = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Non-Repetitive Peak Impulse Current @10/1000us
Non-Repetitive Peak On-State Current @8.3ms (one-half cycle)
Typical Positive Temperature Coefficient for Breakdown Voltage
Symbol
I pp
I TSM
Δ VBR/ Δ T J
Value
30
15
0.1
Unit
A
A
%/°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Symbol
R θ JL
R θ JA
T J
T STG
Value
30
120
-40 to +150
-55 to +150
Unit
°C/W
°C/W
° C
° C
Maximum Rated Surge Waveform
Peak Value (I pp )
Waveform
Standard
Ipp (A)
2/10 us
8/20 us
10/160 us
10/700 us (Note 4)
10/560 us
10/1000 us
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T, K.20/K.21
FCC Part 68
GR-1089-CORE
200
150
100
60
50
30
Half Value
t r = rise time to peak value
t p = decay time to half value
Notes:
4. Applied 2kV, 10/700 us waveform
Electrical Characteristics @T A = 25°C unless otherwise specified
t r
t p
Part Number
Maximum
Rated
Repetitive
Off-State
Voltage
Maximum
Off-State
Leakage
Current @
V DRM
Maximum
Breakover
Voltage
Maximum
On-State
Voltage
@ I T = 1A
Breakover Current
I BO
Holding Current
I H
Typical
Off-State
Capacitance
Marking
Code
V DRM (V)
I DRM (uA)
V BO (V)
V T (V)
Min
(mA)
Max
(mA)
Min
(mA)
Max
(mA)
C O (pF)
TB0640L
TB0720L
TB0900L
TB1100L
TB1300L
TB1500L
TB1800L
TB2300L
TB2600L
TB3100L
TB3500L
58
65
75
90
120
140
160
190
220
275
320
5
5
5
5
5
5
5
5
5
5
5
77
88
98
130
160
180
220
265
300
350
400
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
50
50
50
50
50
50
50
50
50
50
50
800
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
800
800
800
800
800
800
800
800
800
800
800
100
100
100
60
60
60
60
40
40
40
40
T064L
T072L
T090L
T110L
T130L
T150L
T180L
T230L
T260L
T310L
T350L
TB0640L - TB3500L
Document number: DS30359 Rev. 9 - 2
2 of 5
May 2011
? Diodes Incorporated
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